1998. 7. 8
1/6
SEMICONDUCTOR
TECHNICAL DATA
KRA101M~KRA106M
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
MAXIMUM RATING (Ta=25 )
TYPE NO.
R1( )
R2(k )
KRA101M
4.7
4.7
KRA102M
10
10
KRA103M
22
22
KRA104M
47
47
KRA105M
2.2
47
KRA106M
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA101M 106M
V
O
-50
V
Input Voltage
KRA101M
V
I
-20, 10
V
KRA102M
-30, 10
KRA103M
-40, 10
KRA104M
-40, 10
KRA105M
-12, 5
KRA106M
-20, 5
Output Current
KRA101M 106M
I
O
-100
mA
Power Dissipation
P
D
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
BIAS RESISTOR VALUES
EQUIVALENT CIRCUIT
R1
R2
COMMON(+)
OUT
IN
PDF 
ZIP
